DocumentCode
3411856
Title
A new approach for predicting AC hot carrier lifetime
Author
Kato, Haruhisa
Author_Institution
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
130
Lastpage
135
Abstract
The author focuses on how to predict AC hot carrier (MC) lifetime based on the DC HC stress data. As an introduction, he explains the AC transition waveform of an inverter. Then, conventional techniques to predict AC HC lifetime are described. The new technique is then detailed, including the acceleration model, the device parameter to be monitored, and the AC/DC ratio.
Keywords
carrier lifetime; hot carriers; integrated circuit reliability; integrated circuit testing; semiconductor device models; semiconductor device reliability; semiconductor device testing; AC hot carrier lifetime; AC transition waveform; DC HC stress data; acceleration model; carrier lifetime prediction; Acceleration; Circuit testing; Degradation; Hot carriers; Intrusion detection; Inverters; MOS devices; Ring oscillators; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493586
Filename
493586
Link To Document