Title :
A new approach for predicting AC hot carrier lifetime
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
The author focuses on how to predict AC hot carrier (MC) lifetime based on the DC HC stress data. As an introduction, he explains the AC transition waveform of an inverter. Then, conventional techniques to predict AC HC lifetime are described. The new technique is then detailed, including the acceleration model, the device parameter to be monitored, and the AC/DC ratio.
Keywords :
carrier lifetime; hot carriers; integrated circuit reliability; integrated circuit testing; semiconductor device models; semiconductor device reliability; semiconductor device testing; AC hot carrier lifetime; AC transition waveform; DC HC stress data; acceleration model; carrier lifetime prediction; Acceleration; Circuit testing; Degradation; Hot carriers; Intrusion detection; Inverters; MOS devices; Ring oscillators; Stress; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493586
