DocumentCode
3411885
Title
Stepped current stressing of line/stud structures
Author
Yankee, Sally ; Bouldin, Dennis
Author_Institution
IBM Microelectron, USA
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
145
Lastpage
150
Abstract
We have used stepped-current stressing to look at the stability of refractory liners used in Al-based interconnects. These redundancy layers play a critical role in the reliability of Al-based interconnects by allowing current flow even when the Al portion of the line is damaged by electromigration or stress migration. For this work, we have used line/stud structures, both as-received and previously damaged, and analyzed results with respect to a simple model that describes temperature increase in terms of material properties and thermal conduction. We discuss the difference in behavior of damaged and undamaged lines, the temperature associated with failure, and the implications for current-limit design rules.
Keywords
aluminium; electromigration; failure analysis; heat conduction; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; thermal analysis; thermal stability; Al; Al-based interconnects; current-limit design rules; damaged lines; failure; material properties; redundancy layers; refractory liner stability; reliability; stepped-current stressing; stud structures; temperature increase; thermal conduction; Artificial intelligence; Electromigration; Microelectronics; Redundancy; Reliability engineering; Rivers; Semiconductor device modeling; Stress; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493589
Filename
493589
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