Title :
Relationship between orientation and ferroelectric properties in Ir/PZT/Ir epitaxial capacitors
Author :
Okuwada, K. ; Ishida, J. ; Yamada, T. ; Sawabe, A. ; Saito, K.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fDate :
28 May-1 June 2002
Abstract :
Epitaxial Ir/PZT/Ir capacitors with varied compositions of Zr/Ti were investigated in terms of the relationship between the film orientation and ferroelectric properties. The epitaxial interface with iridium, whose lance constant is smaller than that of PZT, greatly influenced the orientation and the tetragonality of the PZT film.
Keywords :
X-ray diffraction; atomic force microscopy; dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; iridium; lattice constants; lead compounds; metallic epitaxial layers; reflection high energy electron diffraction; AFM images; Ir-PZT-Ir; Ir-PbZrO3TiO3-Ir; XRD patterns; epitaxial capacitors; epitaxial interface; ferroelectric capacitors; ferroelectric properties; film orientation; hysteresis curves; iridium electrode; large remanent polarization; lattice constants; reciprocal space mapping; reflection high-energy electron diffraction; surface roughness; tetragonality; Capacitors; Electrodes; Epitaxial growth; Ferroelectric films; Ferroelectric materials; Laboratories; Substrates; Temperature; X-ray scattering; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195884
