Relationship between orientation and ferroelectric properties in Ir/PZT/Ir epitaxial capacitors

Author

Okuwada, K. ; Ishida, J. ; Yamada, T. ; Sawabe, A. ; Saito, K.

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

28 May-1 June 2002

Firstpage

115

Lastpage

118

Abstract

Epitaxial Ir/PZT/Ir capacitors with varied compositions of Zr/Ti were investigated in terms of the relationship between the film orientation and ferroelectric properties. The epitaxial interface with iridium, whose lance constant is smaller than that of PZT, greatly influenced the orientation and the tetragonality of the PZT film.

Keywords

X-ray diffraction; atomic force microscopy; dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; iridium; lattice constants; lead compounds; metallic epitaxial layers; reflection high energy electron diffraction; AFM images; Ir-PZT-Ir; Ir-PbZrO3TiO3-Ir; XRD patterns; epitaxial capacitors; epitaxial interface; ferroelectric capacitors; ferroelectric properties; film orientation; hysteresis curves; iridium electrode; large remanent polarization; lattice constants; reciprocal space mapping; reflection high-energy electron diffraction; surface roughness; tetragonality; Capacitors; Electrodes; Epitaxial growth; Ferroelectric films; Ferroelectric materials; Laboratories; Substrates; Temperature; X-ray scattering; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195884

Filename

1195884