Title :
PLZT thin film optical waveguide devices
Author :
Nashimoto, Keiichi
Author_Institution :
Nozomi Opt. Inc., Sunnyvale, CA, USA
fDate :
28 May-1 June 2002
Abstract :
(Pb,La)(Zr,Ti)O3 (PLZT) bilayer waveguides consisting of an optical waveguide layer and an optical buffer layer were grown on Nb-doped semiconductive SrTiO3 (NST) substrates by solid-phase epitaxy. Very low propagation losses less than 0.1 dB/cm were achieved at 1.55 μm-wavelength in the PLZT slab waveguides on NST substrates. Electro-optic deflection devices were fabricated by preparing indium tin oxide transparent prism electrodes on the surface of the waveguides. Efficient deflection of laser beam coupled in the waveguides was demonstrated by applying voltage between the prism, electrodes and the substrates. Effective electro-optic coefficients as large as 45 pm/V and polarization insensitive properties were observed. A wet-etching or dry-etching process was utilized for fabricating devices with 3 to 6 μm-wide channels in the waveguides. Fabricated optical switches showed low-loss, low-voltage drive, and fast response characteristics.
Keywords :
electro-optical deflectors; electro-optical switches; etching; ferroelectric thin films; integrated optics; lead compounds; optical losses; optical waveguides; solid phase epitaxial growth; PLZT; PbLaZrO3TiO3; Y-branch digital switch; bilayer waveguides; doped semiconductive substrates; dry-etching; effective electro-optic coefficients; electro-optic deflection devices; fast response characteristics; ferroelectric thin film; integrated optical devices; laser beam deflection; low propagation losses less; low-voltage drive; optical buffer layer; optical switches; polarization insensitive properties; repeated spin coating; slab waveguides; solid-phase epitaxy; thin film optical waveguide devices; transparent prism electrodes; wet-etching; Electrodes; Epitaxial growth; Optical buffering; Optical devices; Optical films; Optical waveguides; Semiconductor thin films; Semiconductor waveguides; Substrates; Thin film devices;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195886