Title :
La-doped PbZrTiO3(PLZT) thin film optical detectors (TOD) for retinal implantation-a "bionic" eye
Author :
Zomorrodian, A. ; Wu, N.J. ; Wilczak, S. ; Colbert, C. ; Ignatiev, A. ; Garcia, C.A.
Author_Institution :
Texas Center for Supercond. & Adv. Mater., Houston Univ., TX, USA
fDate :
28 May-1 June 2002
Abstract :
A new ceramic optical microdetector has been developed for retinal implant as a direct replacement for damaged retinal photo-detectors in patients with dystrophies such as Retinitis Pigmentosa (RP) and Age-related Macular degeneration (AMD). The thin film optical detector (TOD) is a heterostructure device composed of an atomically ordered La-doped PbZrTiO3(PLZT) layer epitaxially grown on an atomically ordered Pt thin film layer. The TOD has an optical response, which in the visible region has a peak at around 550 nm with a sensitivity that overlaps the eye response from 400 nm to 650 nm. The device responsivity in the visible range is at a value of ∼ 1000 V/W. Individual detectors are fabricated by photolithography and etch processing as is common in the microelectronics industry. Detectors 40 μm in diameter have been processed and have been integrated with a newly developed polymer carrier layer technique for ease of handling and implantation of microdetector arrays into the eye.
Keywords :
biomedical equipment; etching; eye; ferroelectric devices; ferroelectric thin films; lanthanum; lead compounds; photodetectors; photolithography; prosthetics; sensory aids; PLZT:La; PbLaZrO3TiO3:La; atomically ordered La-doped layer; bionic eye; blind subjects; ceramic optical microdetector; damaged retinal photodetectors; device responsivity; epitaxially grown layer; etch processing; heterostructure device; photolithography; polymer carrier layer technique; retinal implant; subretinal implantation; thin film optical detectors; Atom optics; Atomic layer deposition; Ceramics; Detectors; Implants; Optical films; Optical sensors; Pigmentation; Retina; Thin film devices;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195887