DocumentCode :
3411969
Title :
8 GHz microwave filters based on bulk acoustic waves in piezoelectric AlN thin films
Author :
Lanz, R. ; Muralt, P.
Author_Institution :
Ceramics Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fYear :
2002
fDate :
28 May-1 June 2002
Firstpage :
137
Lastpage :
140
Abstract :
Bulk acoustic wave (BAW) resonators and filters have been fabricated in the frequency range between 7 and 8 GHz. Resonators with quality factors of 550, and coupling factors k2 of 5.5 % have been achieved. The obtained resonator characteristics theoretically yield filters of 3.5 % 3dB bandwidths with flat channel characteristics, and insertion losses of -6 dB. The tradeoffs related to the use of aluminum or platinum bottom electrodes is investigated theoretically. While aluminum is expected to yield filters with lower insertion loss, Pt is expected to yield larger bandwidths.
Keywords :
Q-factor; acoustic resonator filters; aluminium compounds; bulk acoustic wave devices; microwave filters; piezoelectric thin films; sputtered coatings; AlN; bulk acoustic wave filters; bulk acoustic wave resonators; coupling factors; flat channel characteristics; insertion losses; magnetron sputtering deposition; microwave filters; one-dimensional acoustic wave equation; piezoelectric thin films; quality factors; reflector stack; scattering parameter; Acoustic waves; Aluminum; Bandwidth; Frequency; Insertion loss; Microwave filters; Piezoelectric films; Platinum; Q factor; Resonator filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-7414-2
Type :
conf
DOI :
10.1109/ISAF.2002.1195889
Filename :
1195889
Link To Document :
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