Title :
Detection and analysis of ESD-induced melt filaments for FSRAMs
Author :
Prud´homme, M. ; Miller, James W.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Summary form only given. When evaluating a new manufacturing site, Fab A, it was discovered that SRAM devices were susceptible to failures induced by Human Body Model (HBM) Electrostatic Discharge (ESD). The worst case failures were observed for a positive zap with Vss referenced, with data (I/O) pins failing a 1.0 /spl mu/A output leakage criteria at zap voltages as low as 500 V. Similar SRAM devices from a different fab, Fab B, did not have this same sensitivity. To understand the sensitivity of Fab A material, the protection device for the I/O pins was analyzed.
Keywords :
SRAM chips; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; leakage currents; 1 muA; 500 V; ESD-induced melt filaments; HBM ESD; Human Body Model; I/O pins; SRAM devices; electrostatic discharge; manufacturing site evaluation; output leakage criteria; protection device; Electric breakdown; Electrostatic discharge; Failure analysis; Implants; Random access memory; Silicon; Testing; Variable structure systems; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493594
