Title :
Assessment of a unipolar pulsed ramp for the characterisation of MOS gate oxide reliability
Author :
Martin, Andreas ; O´Sullivan, Pada ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
The unipolar pulsed ramp is compared to the commonly used staircase ramp. RVS and combined RVS/CVS measurements are performed on MOS gate oxides using both types of ramps with a wide range of ramp parameters. From the experiments it can be concluded that the unipolar pulsed ramp shows identical measurement results to the staircase ramp.
Keywords :
MIS devices; dielectric thin films; electric breakdown; semiconductor device reliability; MOS gate oxide reliability; characterisation; ramp parameters; staircase ramp; unipolar pulsed ramp; Area measurement; Breakdown voltage; Current measurement; Electric breakdown; Electronic mail; Microelectronics; Monitoring; Performance evaluation; Pulse measurements; Stress measurement;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493595
