A new WLR method based on model parameter analysis

Author

Zimmer, T. ; Duluc, J.B. ; Milet, N. ; Dom, J.P.

Author_Institution

Lab. de Microelectron. IXL, Bordeaux I Univ., Talence, France

fYear

1995

fDate

22-25 Oct. 1995

Firstpage

159

Abstract

An approach which identifies key disturbances which cause bipolar model parametric variations and correlation is presented. Model parameters, expressed as a function of technological data, are analyzed through a straightforward correlation study. Combining these results the key process variables fluctuation which causes circuit performance changes can be isolated. This methodology which links model parameter and circuit performance to process quantities, is a benefit to both device manufacturers and end users.

Keywords

bipolar integrated circuits; bipolar transistors; characteristics measurement; integrated circuit modelling; integrated circuit reliability; reliability theory; semiconductor device models; WLR method; bipolar model parametric variations; bipolar transistors; circuit performance; correlation study; key disturbances; key process variables fluctuation; model parameter analysis; process quantities; Circuits; Data analysis; Doping; Electron emission; Fluctuations; Isolation technology; Manufacturing processes; Postal services; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop, 1995. Final Report., International

Conference_Location

Lake Tahoe, CA, USA

Print_ISBN

0-7803-2705-5

Type

conf

DOI

10.1109/IRWS.1995.493596

Filename

493596