Title :
Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study
Author :
Bouillon, P. ; Skotnicki, T. ; Kelaidis, C. ; Gwoziecki, R. ; Dollfus, P. ; Regolini, J.-L. ; Sagnes, I. ; Bodnar, S.
Author_Institution :
CNET, Meylan, France
Abstract :
Varied advanced architectures for 0.18/0.12 CMOS are investigated experimentally. Performances of heavy ion implanted, epitaxial and/or SiGe channels are compared through their electrical and physical characteristics. Conclusions on optimal 0.18/0.12 /spl mu/m channel architectures are drawn with respect to different applications. Very promising transport properties in SiGe channels are reported.
Keywords :
CMOS integrated circuits; Ge-Si alloys; integrated circuit technology; ion implantation; semiconductor epitaxial layers; 0.12 micron; 0.18 micron; SiGe; SiGe channels; bulk CMOS; electrical characteristics; epitaxial channels; heavy ion implanted channels; optimal channel architecture; physical characteristics; transport properties; CMOS technology; Doping profiles; Epitaxial growth; Germanium silicon alloys; Implants; Laboratories; Low voltage; MOSFETs; Silicon germanium; Telecommunications;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554045
