Structure control of ferroelectric PbTiO3 thin films using SrTiO3 buffer layer prepared by metalorganic decomposition

Polycrystalline PbTiO₃ thin films were successfully formed on SrTiO₃ buffer layer by metalorganic decomposition (MOD) technique. The PbTiO₃ films showed the perovskite structure after annealing at 700°C for 30 min in N₂ ambient. A higher dielectric constant of 157 is obtained in the PbTiO₃/SrTiO₃/Si structure. The hysteresis loop in the capacitance-voltage curves of the MFIS configuration indicated a memory window of 1.2 V with a programming voltage swing of ±5 V due to polarization effect. The memory window will satisfy the practical application of the MFIS-FET memories operating at low voltage in future ULSIs.