DocumentCode
3412047
Title
A new technique to measure thin oxide thickness in IC manufacturing
Author
Nay, Deepak K. ; Wang, Larry ; Rakkhit, Rajat
Author_Institution
Logic Technol. Div., Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
160
Abstract
A new method to measure thin oxide thickness in CMOS technology is presented. Using a constant Fowler-Nordheim tunneling current through the gate oxide, the tunnel voltage across the oxide has been shown to be linearly proportional to the gate oxide thickness. The proposed tunnel voltage method can detect oxide thickness variation as small as 0.1 /spl Aring/ in product wafers.
Keywords
CMOS integrated circuits; integrated circuit manufacture; integrated circuit measurement; thickness measurement; tunnelling; voltage measurement; CMOS technology; IC manufacturing; constant Fowler-Nordheim tunneling current; gate oxide thickness; oxide thickness variation detection; thin oxide thickness measurement; tunnel voltage; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Furnaces; Manufacturing; Monitoring; Testing; Thickness measurement; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493597
Filename
493597
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