Title :
A new technique to measure thin oxide thickness in IC manufacturing
Author :
Nay, Deepak K. ; Wang, Larry ; Rakkhit, Rajat
Author_Institution :
Logic Technol. Div., Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
A new method to measure thin oxide thickness in CMOS technology is presented. Using a constant Fowler-Nordheim tunneling current through the gate oxide, the tunnel voltage across the oxide has been shown to be linearly proportional to the gate oxide thickness. The proposed tunnel voltage method can detect oxide thickness variation as small as 0.1 /spl Aring/ in product wafers.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; integrated circuit measurement; thickness measurement; tunnelling; voltage measurement; CMOS technology; IC manufacturing; constant Fowler-Nordheim tunneling current; gate oxide thickness; oxide thickness variation detection; thin oxide thickness measurement; tunnel voltage; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Furnaces; Manufacturing; Monitoring; Testing; Thickness measurement; Tunneling; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493597
