Title :
Depth profile of fixed charge in epitaxial oxide films on silicon substrate for MFIS structure
Author :
Yamada, T. ; Wakiya, N. ; Shinozaki, K. ; Mizutani, N.
Author_Institution :
Dept. of Metall. & Ceramics Sci., Tokyo Inst. of Technol., Japan
fDate :
28 May-1 June 2002
Abstract :
The depth profiles of fixed charges in heteroepitaxial SrTiO3/CeO2/yttria-stabilized zirconia(YSZ)/Si and SrTiO3/MgO/Si structures were investigated using the capacitance-voltage (C-V) measurement of the films with slanted thickness. The heterostructures with slanted thickness were fabricated by pulsed laser deposition (PLD) using in-situ masking technique. It was found that there are negative fixed charges in both films. From the equivalent oxide thickness dependence of the mid-gap voltage, it was clarified that these negative charges are located at the interface between layers and near the ultra thin layer on Si.
Keywords :
MIS structures; cerium compounds; epitaxial layers; ferroelectric materials; ferroelectric storage; ferroelectric thin films; magnesium compounds; pulsed laser deposition; silicon; strontium compounds; yttrium compounds; zirconium compounds; MFIS structure; Si substrate; SrTiO3-CeO2-ZrO2Y2O3-Si; SrTiO3-MgO-Si; SrTiO3/CeO2/yttria-stabilized zirconia/Si; SrTiO3/MgO/Si; capacitance-voltage measurement; depth profile; epitaxial oxide films; equivalent oxide thickness dependence; fixed charge; in-situ masking technique; mid-gap voltage; negative fixed charges; pulsed laser deposition; slanted thickness; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Magnetic field induced strain; Optical pulses; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Thickness measurement;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195894
