Title :
Statistical reliability prediction
Author_Institution :
Gibson Eng., Atlanta, GA, USA
Abstract :
An analysis technique is presented which allows the construction of a statistical model of device lifetime given data obtained from traditional reliability life testing. Unlike techniques presently used, this method does not require that each life test be completed to a high percentage failure, produces a model whose accuracy is quantifiable, and can predict expected times to failure at percentages other than 50%. Confidence and prediction intervals can be calculated around all model parameters (such as activation energy), all performance parameters (such as estimated median time to failure, MTF), and individual performance predictions (estimated times-to-failure, TTF). This procedure is demonstrated using the electromigration failure mechanism, but can be applied to any failure model.
Keywords :
electromigration; failure analysis; life testing; reliability theory; semiconductor device metallisation; semiconductor device reliability; statistical analysis; activation energy; confidence; device lifetime; electromigration failure mechanism; estimated median time to failure; estimated times-to-failure; prediction intervals; quantifiable accuracy; reliability life testing; statistical reliability prediction; times to failure; Availability; Current density; Data mining; Electromigration; Equations; Failure analysis; Life testing; Parameter estimation; Predictive models; Temperature;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493598