Title :
Current sensing trench power MOSFET for automotive applications
Author :
Xiao, Y. ; Cao, J. ; Chen, J.D. ; Spring, K.
Author_Institution :
Int. Rectifier Corp., El Segundo, CA
Abstract :
Current-sensing power MOSFET incorporating current sensing feature with a power MOSFET offers a simple solution for overcurrent protection without additional sensing elements. In this work a low RDS-ON (<2 mOmega), high sense ratio (>10,000:1) trench current sensing MOSFET is designed and evaluated. Critical factors affecting the current sense ratio, including gate drive voltage, switching current, and device temperature are characterized. Sense ratio changes of 2.7% at gate drive voltage of 5 V-10 V, and 2.9% over-50degC-150degC are realized. The device is implemented in a low frequency motor drive module for automotive applications; initial circuit evaluation results demonstrated feasibility and advantages of the current sensing scheme
Keywords :
automotive electronics; electric sensing devices; motor drives; overcurrent protection; power MOSFET; 5 to 10 V; automotive application; device temperature; gate drive voltage; initial circuit evaluation; low frequency motor drive module; overcurrent protection; switching current; trench current sensing power MOSFET; Automotive applications; FETs; Frequency; MOSFET circuits; Packaging; Power MOSFET; Protection; Resistors; Temperature sensors; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1453061
