Electronically tunable floating CMOS resistor independent of the MOS parameters and temperature

Author

Papazoglu, C.A. ; Karybakas, C.A.

Author_Institution

Lab. of Electron., Aristotelian Univ. of Thessaloniki, Greece

Volume

1

fYear

1999

fDate

1999

Firstpage

311

Abstract

A novel, electronically tunable floating resistor, which can be realized by CMOS technology is presented in this work. The resistance value is independent of the MOS threshold voltage V_T, the mobility μ₀ and the parameter C_0x. The above characteristics allow the implementation of an accurate resistance value, independent of temperature. Yet, a theoretical analysis concerning second order effects is presented which leads to useful conclusions concerning circuit design and operation. The theoretical predictions are verified by PSPICE simulation results

Keywords

CMOS analogue integrated circuits; carrier mobility; circuit tuning; linearisation techniques; resistors; CMOS resistor; MOS threshold voltage; circuit design; electronically tunable floating resistor; second order effects; squaring circuit; threshold voltage shifter; CMOS technology; Circuit simulation; MOSFETs; Predictive models; Resistors; SPICE; Temperature dependence; Temperature sensors; Threshold voltage; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.812285

Filename

812285