DocumentCode :
3412126
Title :
Ferroelectric properties of PMNT thin films epitaxially grown on La-doped SrTiO3
Author :
Wasa, K. ; Yamada, Y. ; Shimoda, M. ; Seo, S.H. ; Noh, D.Y. ; Okin, H. ; Yamamoto, T.
Author_Institution :
Fac. of Sci., Yokohama Nat. Univ., Japan
fYear :
2002
fDate :
28 May-1 June 2002
Firstpage :
179
Lastpage :
182
Abstract :
Thin films of single phase (PbMg13/Nb23/O3)1-x(PbTiO3)x, x = 0.2, (0.8PMN 0.2PT), were epitaxially grown on La-doped (100)SrTiO3 by a magnetron diode sputtering. Thickness of the sputtered thin films was ranged from 5nm to 1800nm. The PMNT thin films were grown through the Frank van der Merwe mode and showed single crystal-like uniform continuous structure. Their dielectric and/or ferroelectric properties were described.
Keywords :
ferroelectric materials; ferroelectric thin films; lanthanum; lead compounds; sputtered coatings; strontium compounds; vapour phase epitaxial growth; (PbMg13/Nb23/O3)1-x(PbTiO3)x; 5 to 1800 nm; Frank van der Merwe mode; PMN-PbTiO3; PMNT thin films; PbMgO3NbO3-PbTiO3; SrTiO3:La; epitaxially grown; ferroelectric properties; magnetron diode sputtering; single crystal-like uniform continuous structure; thickness; Chemicals; Conductive films; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Powders; Sputtering; Temperature; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-7414-2
Type :
conf
DOI :
10.1109/ISAF.2002.1195899
Filename :
1195899
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3412126
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