• DocumentCode
    3412126
  • Title

    Ferroelectric properties of PMNT thin films epitaxially grown on La-doped SrTiO3

  • Author

    Wasa, K. ; Yamada, Y. ; Shimoda, M. ; Seo, S.H. ; Noh, D.Y. ; Okin, H. ; Yamamoto, T.

  • Author_Institution
    Fac. of Sci., Yokohama Nat. Univ., Japan
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    Thin films of single phase (PbMg13/Nb23/O3)1-x(PbTiO3)x, x = 0.2, (0.8PMN 0.2PT), were epitaxially grown on La-doped (100)SrTiO3 by a magnetron diode sputtering. Thickness of the sputtered thin films was ranged from 5nm to 1800nm. The PMNT thin films were grown through the Frank van der Merwe mode and showed single crystal-like uniform continuous structure. Their dielectric and/or ferroelectric properties were described.
  • Keywords
    ferroelectric materials; ferroelectric thin films; lanthanum; lead compounds; sputtered coatings; strontium compounds; vapour phase epitaxial growth; (PbMg13/Nb23/O3)1-x(PbTiO3)x; 5 to 1800 nm; Frank van der Merwe mode; PMN-PbTiO3; PMNT thin films; PbMgO3NbO3-PbTiO3; SrTiO3:La; epitaxially grown; ferroelectric properties; magnetron diode sputtering; single crystal-like uniform continuous structure; thickness; Chemicals; Conductive films; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Powders; Sputtering; Temperature; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195899
  • Filename
    1195899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3412126