Title :
Compositionally modulated Pb(Mg13/Nb23/)O3-PbTiO3 relaxor thin films deposited by pulsed excimer laser ablation technique
Author :
Laha, Apurba ; Victor, P. ; Krupanidhi, S.B.
Author_Institution :
Mater. Res. Centre, Indian Inst. of Sci., Bangalore, India
fDate :
28 May-1 June 2002
Abstract :
Thin films of (1-x)Pb(Mg13/Nb23/)O3-xPbTiO3 (x = 0.1 to 0.3) (PMN-PT) were deposited on the platinum coated silicon substrate by pulsed excimer laser ablation technique. A template layer of LaSr0.5Co0.5O3 (LSCO) was deposited on platinum substrate prior to the deposition of PMN-PT thin films. The composition and the structure of the films were modulated via proper variation of the deposition parameter such as substrate temperature, laser fluence and thickness of the template layers. We observed the impact of the thickness of LSCO template layer on the orientation of the films. A room temperature dielectric constant varying from 2000 to 4500 was noted for different composition of the films. The dielectric properties of the films were studied over the frequency range of 100 Hz - 100 kHz over a wide range of temperatures. The films exhibited the relaxor-type behavior that was characterized by the frequency dispersion of the temperature of dielectric constant maxima (Tm) and also diffuse phase transition.
Keywords :
ferroelectric thin films; ferroelectric transitions; lanthanum compounds; lead compounds; permittivity; platinum; pulsed laser deposition; relaxor ferroelectrics; strontium compounds; 100 Hz to 100 kHz; LaSr0.5Co0.5O3; PMN-PbTiO3; PbMgO3NbO3-PbTiO3; Pt-Si; compositionally modulated Pb(Mg13/Nb23/)O3-PbTiO3 relaxor thin films; deposition parameter; dielectric constant maxima; diffuse phase transition; frequency dispersion; laser fluence; pulsed excimer laser ablation technique; room temperature dielectric constant; substrate temperature; template layer; Dielectric constant; Dielectric substrates; Frequency; Niobium; Platinum; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195900