DocumentCode
3412169
Title
Dielectric step stress and life stress comparison
Author
Strong, A. ; Wu, E. ; Bolam, R.
Author_Institution
IBM Mictroelectron., Essex Junction, VT, USA
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
165
Abstract
Voltage life-stress results have been compared with voltage step stress results. The figure of merit chosen for this comparison was TDDB. Two different oxides were used, one having a thickness of 13.5 nm and the other having a thickness of 8.2 nm.
Keywords
dielectric thin films; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; silicon compounds; step response; 13.5 nm; 8.2 nm; SiO/sub 2/; TDDB; dielectric films; oxides; thickness; time dependent dielectric breakdown; voltage life-stress; voltage step stress; Acceleration; Dielectrics; Electric breakdown; Hardware; Microelectronics; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493602
Filename
493602
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