DocumentCode :
3412186
Title :
Preparation of ferroelectric Ba(Ti0.85Sn0.15)O3 thin films by metal-organic decomposition
Author :
Miyamoto, T. ; Murakami, S. ; Inoue, K. ; Suzuki, Y. ; Nomura, T. ; Noda, M. ; Okuyama, M.
Author_Institution :
Technol. Res. Inst. of Osaka Prefecture, Japan
fYear :
2002
fDate :
28 May-1 June 2002
Firstpage :
191
Lastpage :
194
Abstract :
Ferroelectric Ba(Ti0.85Sn0.15)O3 (BTS15) thin film is newly prepared on the Pt/Ti/SiO2/Si substrate by Metal-Organic Decomposition. The firing condition is determined by thermogravimetric and differential thermal analysis. The BTS15 thin film with flat surface and uniform thickness is obtained by spin coating in N2 atmosphere which avoid moisture. The BTS15 film has a perovskite phase and is random-oriented, with strong (110) orientation. It is also found that crystalline structure is cubic at 24°C with lattice constant of 4.01 Å, and grain size of about 30 nm estimated by Scherrer equation and SEM image. From P-E hysteresis loop at 20°C, the polarization at E = 0 and electric field at P = 0 are 1.07 μC/cm2 and 24.0 kV/cm, respectively. It is observed that dielectric constant decreases monotonously from about 830 to 630 with increasing temperature ranging from 20 to 50°C. Finally, it is found that the BTS15 thin film shows a sufficient ferroelectricity and is an attractive material for the functional ferroelectric devices, such as thermal-type infrared sensor.
Keywords :
barium compounds; dielectric hysteresis; differential thermal analysis; ferroelectric ceramics; ferroelectric thin films; grain size; lattice constants; scanning electron microscopy; 20 to 50 degC; BTS15; BaTi0.85O3Sn0.15O3; P-E hysteresis loop; Pt-Ti-SiO2-Si; SEM; Scherrer equation; Si; crystalline structure; differential thermal analysis; ferroelectric Ba(Ti0.85Sn0.15)O3 thin films; grain size; lattice constant; metal-organic decomposition; thermogravimetric analysis; Atmosphere; Coatings; Ferroelectric materials; Firing; Grain size; Moisture; Semiconductor thin films; Substrates; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-7414-2
Type :
conf
DOI :
10.1109/ISAF.2002.1195902
Filename :
1195902
Link To Document :
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