An 800 mW 10 Gb Ethernet transceiver in 0.13 μm CMOS

Author

Sidiropoulos, S. ; Acharya, N. ; Pak Chau ; Dao, Jerome ; Feldman, Alexander ; Haw-Jyh Liaw ; Loinaz, M. ; Narayanaswami, R.S. ; Portmann, Christopher ; Rabii, S. ; Salleh, A. ; Sheth, Swapneel ; Vleugels, K. ; Yue, Peng ; Stark, Dylan

Author_Institution

Aeluros, Mountain View, CA, USA

fYear

2004

fDate

15-19 Feb. 2004

Firstpage

168

Abstract

A fully integrated 10 Gb Ethernet transceiver IC using a standard 0.13 μm CMOS process integrates 10.3 Gb/s and 4×3.12 Gb/s analog front-ends, with Layer-1 coding and management functionality. The 2.5×5 mm² IC exceeds both 10GE and SONET specifications, and dissipates 800 mW from its 1.2/2.5 V supplies.

Keywords

CMOS integrated circuits; SONET; integrated circuit measurement; local area networks; telecommunication standards; transceivers; 1.2 V; 10.3 Gbit/s; 10GE specifications; 12.48 Gbit/s; 2.5 V; 2.5 mm; 3.12 Gbit/s; 5 mm; 800 mW; CMOS Ethernet transceiver; Layer-1 coding functionality; SONET specifications; analog front-ends; fully integrated Ethernet transceiver IC; management functionality; power dissipation; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Clocks; Ethernet networks; Frequency; Optical filters; Phase locked loops; Resonance; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International

ISSN

0193-6530

Print_ISBN

0-7803-8267-6

Type

conf

DOI

10.1109/ISSCC.2004.1332647

Filename

1332647