Title :
A 20GHz VCO with 5GHz tuning range in 0.25 μm SiGe BiCMOS
Author :
Jung, Byung-Ik ; Harjani, Ramesh
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
Abstract :
This paper presents a 20 GHz VCO with 5 GHz tuning range in 0.25 μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9 mW, and the measured phase noise at 1 MHz offset is -101.2 dBc/Hz.
Keywords :
BiCMOS analogue integrated circuits; MMIC oscillators; circuit tuning; negative resistance circuits; phase noise; voltage-controlled oscillators; 0.25 micron; 20 GHz; 9 mW; BiCMOS; SiGe; VCO; differential capacitive emitter degenerated structure; low parasitic capacitance; negative resistance cell; phase noise; tuning range; BiCMOS integrated circuits; Circuit optimization; Energy consumption; Frequency; Germanium silicon alloys; MOS devices; Parasitic capacitance; Phase noise; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332652
