Analytical calculation of the conduction and switching losses of the conventional matrix converter and the (very) sparse matrix converter

To dimension the power semiconductors of a conventional matrix converter (CMC) or a two-stage sparse matrix converter (SMC and/or very SMC) extensive simulations usually have to be performed as the losses of each device are dependent on several operating parameters, including the different ratios of input and output frequency. In this paper analytical expressions with high accuracy are derived for the switching and conduction losses of the CMC, SMC and VSMC´s power semiconductors. These expressions directly show the parameter dependencies of the power semiconductor switching and conduction losses and therefore can be used to determine the maximal local or average thermal stress and for the thermal design of the power components. Furthermore, the total converter losses and conversion efficiency can be determined with minimal calculation effort