Title :
A polar modulator transmitter for EDGE
Author :
Elliott, M. ; Montalvo, T. ; Murden, F. ; Jeffries, Brad ; Strange, Jon ; Atkinson, Sarah ; Hill, Allyson
Author_Institution :
Analog Devices, Greensboro, NC, USA
Abstract :
This 0.5 μm SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. The modulator achieves phase noise of -152 dBc/Hz and -164 dBc/Hz at 10 MHz and 20 MHz, respectively, with a measured EVM of 3%. The IC consumes 55 mA and 75 mA at 2.7 V for GSM and EDGE, respectively.
Keywords :
BiCMOS integrated circuits; amplitude modulation; cellular radio; modulators; phase modulation; phase noise; transceivers; 0.5 micron; 10 MHz; 1710 to 1910 MHz; 2.7 V; 20 MHz; 55 mA; 75 mA; 824 to 915 MHz; BiCMOS; EDGE transmit capability; EVM; GSM transceiver IC; SiGe; amplitude modulation; phase modulation; phase noise; polar modulator transmitter; BiCMOS integrated circuits; Filters; GSM; Germanium silicon alloys; Phase modulation; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Transceivers; Transmitters;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332658
