• DocumentCode
    3412572
  • Title

    VSWR-protected silicon bipolar power amplifier with smooth power control slope

  • Author

    Scuderi, A. ; Carrara, Francesco ; Palmisano, G.

  • Author_Institution
    Facolta di Ingegneria, Catania Univ., Italy
  • fYear
    2004
  • fDate
    15-19 Feb. 2004
  • Firstpage
    194
  • Abstract
    A 1.8 GHz silicon bipolar PA is presented. A protection circuit enables the amplifier to sustain a 10:1 load VSWR at 5 V supply despite a low BVceo of 6.5 V. A temperature-compensated bias network allows a moderate power-control slope of less than 80 dB/V. A 50% PAE is attained at a 33.8 dBm output power level. The 1.2×1.5 mm2 die is implemented in 0.8 μm BiPMOS.
  • Keywords
    BIMOS integrated circuits; UHF power amplifiers; compensation; power control; 0.8 micron; 1.2 mm; 1.5 mm; 1.8 GHz; 5 V; 50 percent; 6.5 V; BiPMOS; Si; VSWR protection circuit; VSWR-protected power amplifier; silicon bipolar power amplifier; smooth power control slope; temperature-compensated bias network; Bonding; Breakdown voltage; Circuits; III-V semiconductor materials; Impedance; Power amplifiers; Power control; Protection; Semiconductor optical amplifiers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8267-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2004.1332660
  • Filename
    1332660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3412572