Title :
VSWR-protected silicon bipolar power amplifier with smooth power control slope
Author :
Scuderi, A. ; Carrara, Francesco ; Palmisano, G.
Author_Institution :
Facolta di Ingegneria, Catania Univ., Italy
Abstract :
A 1.8 GHz silicon bipolar PA is presented. A protection circuit enables the amplifier to sustain a 10:1 load VSWR at 5 V supply despite a low BVceo of 6.5 V. A temperature-compensated bias network allows a moderate power-control slope of less than 80 dB/V. A 50% PAE is attained at a 33.8 dBm output power level. The 1.2×1.5 mm2 die is implemented in 0.8 μm BiPMOS.
Keywords :
BIMOS integrated circuits; UHF power amplifiers; compensation; power control; 0.8 micron; 1.2 mm; 1.5 mm; 1.8 GHz; 5 V; 50 percent; 6.5 V; BiPMOS; Si; VSWR protection circuit; VSWR-protected power amplifier; silicon bipolar power amplifier; smooth power control slope; temperature-compensated bias network; Bonding; Breakdown voltage; Circuits; III-V semiconductor materials; Impedance; Power amplifiers; Power control; Protection; Semiconductor optical amplifiers; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332660
