DocumentCode
3412580
Title
A small GSM power amplifier module using Si-LDMOS driver MMIC
Author
Shimizu, Tsuyoshi ; Nunogawa, Y. ; Furuya, Tadasuke ; Yamada, Shigeru ; Yoshida, Isao
Author_Institution
Renesas Technol., Gunma, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
196
Abstract
A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm2 includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.
Keywords
CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; current mirrors; field effect MMIC; power control; 3.6 V; 824 to 915 MHz; CMOS process; LDMOS driver MMIC; automatic power control function; built-in power control loop; cellular phones; current sense method; current-mirror biasing circuit; function-integrated approach; quad-band high power amplifier; small GSM power amplifier module; three-stage amplifier; Costs; Driver circuits; GSM; MMICs; MOSFETs; Power amplifiers; Power generation; Power system reliability; Temperature; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332661
Filename
1332661
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