DocumentCode
3412609
Title
Anomalous short-channel effects in 0.1 /spl mu/m MOSFETs
Author
Crabbi, E. ; Logan, R. ; Snare, J. ; Agnello, P. ; Sun, J.
Author_Institution
Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
571
Lastpage
574
Abstract
A systematic study of the impact of junction dose on N- and P-channel MOSFETs with 0.10 /spl mu/m effective channel lengths operating at 1.8V is reported. A non-monotonic dependence of saturated V/sub t/ roll-off on junction dose is observed with a minimum occurring for junction doses in the mid-10/sup 14/ cm/sup -2/ range. The degradation occurring at lower doses is caused by the lateral grading of the junctions as determined by the bias dependence of the overlap capacitance while that at higher doses is caused by deeper junctions.
Keywords
MOSFET; capacitance; doping profiles; ion implantation; semiconductor device models; 0.1 micron; 1.8 V; NMOSFET; PMOSFET; anomalous short-channel effects; bias dependence; effective channel lengths; junction dose; lateral grading; n-channel MOSFETs; overlap capacitance; p-channel MOSFETs; saturated threshold voltage rolloff; Annealing; Capacitance; Design optimization; FETs; Fabrication; Implants; Lithography; MOSFETs; Radiofrequency identification; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554048
Filename
554048
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