A high-bandwidth voltage controlled oscillator (VCO) with a frequency-multiplied/divided range of 0.25-20 GHz implemented in a GaAs HBT process

Author

Campbell, P.M. ; Greub, H.J. ; Garg, A. ; Steidl, S. ; Maier, C. ; Carlough, S. ; McDonald, J.F.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1995

fDate

18-22 Sep 1995

Firstpage

49

Lastpage

52

Abstract

A high speed voltage-controlled oscillator (VCO) bas been developed using 50 GHz GaAs-AlGaAs HBTs which can generate differential signals in the range of 0.25-20 GHz. The design process was focused on producing a layout with highly-matched parasitic capacitance by exploiting the high degree of symmetry present in differential circuits. The system design and cell layout techniques are described in detail using examples from the VCO. The operation of the VCO is also discussed along with design tradeoffs

Keywords

III-V semiconductors; aluminium compounds; application specific integrated circuits; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit layout; voltage-controlled oscillators; 0.25 to 20 GHz; GaAs HBT process; GaAs-AlGaAs; cell layout techniques; differential circuits; frequency-multiplied/divided range; high speed operation; high-bandwidth VCO; highly-matched parasitic capacitance; voltage controlled oscillator; Circuit noise; Circuit testing; Clocks; Delay effects; Frequency conversion; Integrated circuit interconnections; Parasitic capacitance; Signal design; Switches; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Conference and Exhibit, 1995., Proceedings of the Eighth Annual IEEE International

Conference_Location

Austin, TX

ISSN

1063-0988

Print_ISBN

0-7803-2707-1

Type

conf

DOI

10.1109/ASIC.1995.580679

Filename

580679