• DocumentCode
    3412685
  • Title

    Bi4Ti3O12-based lead-free piezoelectric ceramics with grain orientation

  • Author

    Nagata, H. ; Fujita, Y. ; Enosawa, H. ; Takenaka, T.

  • Author_Institution
    Fac. of Sci. & Technol., Tokyo Univ. of Sci., Chiba, Japan
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    Piezoelectric properties of Bi4Ti3-xNbxO12 [BITN-x] and B4Ti3-xVxO12 [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k33 of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k33 values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.
  • Keywords
    X-ray diffraction; bismuth compounds; densification; density; dielectric hysteresis; dielectric losses; dielectric polarisation; grain boundaries; grain size; permittivity; piezoceramics; powder technology; sintering; B4(TiV)3O12; Bi4(TiNb)3O12; Bi4Ti3O12; X-ray diffraction analysis; ball milling; bismuth layer-structured ferroelectrics; calcining; dielectric constant; dielectric loss tangent; electromechanical coupling factor; grain boundary; grain orientation effects; hot-forging; hysteresis loop; optimal sintering temperature; piezoelectric ceramics; piezoelectric properties; resonance-antiresonance method; temperature dependence; Anisotropic magnetoresistance; Bismuth; Ceramics; Conductivity; Dielectric loss measurement; Dielectric measurements; Environmentally friendly manufacturing techniques; Hafnium; Piezoelectric materials; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195929
  • Filename
    1195929