Title :
Bi4Ti3O12-based lead-free piezoelectric ceramics with grain orientation
Author :
Nagata, H. ; Fujita, Y. ; Enosawa, H. ; Takenaka, T.
Author_Institution :
Fac. of Sci. & Technol., Tokyo Univ. of Sci., Chiba, Japan
fDate :
28 May-1 June 2002
Abstract :
Piezoelectric properties of Bi4Ti3-xNbxO12 [BITN-x] and B4Ti3-xVxO12 [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k33 of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k33 values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.
Keywords :
X-ray diffraction; bismuth compounds; densification; density; dielectric hysteresis; dielectric losses; dielectric polarisation; grain boundaries; grain size; permittivity; piezoceramics; powder technology; sintering; B4(TiV)3O12; Bi4(TiNb)3O12; Bi4Ti3O12; X-ray diffraction analysis; ball milling; bismuth layer-structured ferroelectrics; calcining; dielectric constant; dielectric loss tangent; electromechanical coupling factor; grain boundary; grain orientation effects; hot-forging; hysteresis loop; optimal sintering temperature; piezoelectric ceramics; piezoelectric properties; resonance-antiresonance method; temperature dependence; Anisotropic magnetoresistance; Bismuth; Ceramics; Conductivity; Dielectric loss measurement; Dielectric measurements; Environmentally friendly manufacturing techniques; Hafnium; Piezoelectric materials; Temperature dependence;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195929
