Silicon-on-insulator based high-temperature electronics for automotive applications

In recent years increasing demand for hybrid electric vehicle has generated the need for reliable and low-cost high-temperature electronics which can operate at the extreme temperatures that exists under the hood. A high-voltage and high-temperature gate-driver integrated circuit for SiC FET switches is designed and implemented in a 0.8-micron Silicon-on-Insulator high-voltage process. First prototype chip has been successfully tested up to 200degC ambient temperature without any heat sink or cooling mechanism. This gate-driver chip is intended to drive SiC power FETs of the DC-DC converters in a hybrid electric vehicle. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175degC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module. A second prototype has also been designed with more robust features.