DocumentCode
3412985
Title
Low resistive ultra shallow junction for sub 0.1 /spl mu/m MOSFETs formed by Sb implantation
Author
Shibahara, K. ; Mifuji, N. ; Kawabata, K. ; Kugimiya, T. ; Furumoto, H. ; Tauno, M. ; Yokoyama, S. ; Nagata, M. ; Miyazaki, S. ; Hirose, M.
Author_Institution
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
579
Lastpage
582
Abstract
Nineteen-nm depth ultra shallow and 1.7 k/spl Omega//sq. low resistive junctions were fabricated by Sb implantation. The shallowness of the junction is attributed to the low diffusive nature of Sb. The junction was applied to 0.15 /spl mu/m MOSFETs, and excellent suppression of short channel effect and G/sub m/ improvement were confirmed.
Keywords
MOSFET; antimony; ion implantation; p-n junctions; 0.1 to 0.15 micron; 19 nm; MOSFETs; Sb implantation; Si:Sb; low resistive junction; short channel effect suppression; ultra shallow junction; Annealing; CMOS process; Doping; Fabrication; Ion implantation; Laboratories; MOSFET circuits; Solids; Steel; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554050
Filename
554050
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