DocumentCode :
3412988
Title :
A 108Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology
Author :
Meghelli, Mounir
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2004
fDate :
15-19 Feb. 2004
Firstpage :
236
Abstract :
A 4:1 multiplexer implemented in a 210GHz ft, 0.13μm SiGe-bipolar technology and operating beyond 100Gb/s is reported. Control of on-chip clock distribution is critical to achieve such data rate. The chip consumes 1.45W from a -3.3V supply and exhibits less than 340fs rms jitter on the output data.
Keywords :
Ge-Si alloys; bipolar integrated circuits; high-speed integrated circuits; multiplexing equipment; timing jitter; 1.45 W; 108 Gbit/s; RMS jitter; SiGe; bipolar technology; high-speed IC; multiplexer; on-chip clock distribution; single-ended output eye diagrams; tree architecture; Bandwidth; Clocks; Delay; Frequency; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Power transmission lines; Resistors; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN :
0193-6530
Print_ISBN :
0-7803-8267-6
Type :
conf
DOI :
10.1109/ISSCC.2004.1332681
Filename :
1332681
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3412988
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