Title :
Growth of substituted langasite-type Ca3NbGa3Si2O14 single crystals, and their dielectric, elastic and piezoelectric properties
Author :
Adachi, Masatoshi ; Funakawa, Takeo ; Karaki, Tomoaki
Author_Institution :
Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan
fDate :
28 May-1 June 2002
Abstract :
It has been attempted to grow new langasite crystals. Ba3Nb2Ga4O14, Ba3NbGa3Si2O14 and Ba3Nb0.5Ga2.5Si3O14 have been synthesized by solid state reaction and then grown by the Czochralski method. Among them, only Ba3NbGa3Si2O14 is a langasite structure and its melting temperature is 1260°C. Growth of this crystal has been attempted, but a single phase Ba3NbGa3Si2O14 could not be grown because Ba ion is too large for A site in this system. Further, by substitution of Ba with Ca in Ba3NbGa3Si2O14, transparent and colorless Ca3NbGa3Si2O14 crystals have been successfully grown at the melting point of 1325°C.
Keywords :
barium compounds; calcium compounds; crystal growth from melt; elasticity; gallium compounds; melting point; niobium compounds; piezoelectric materials; transparency; 1260 degC; 1325 degC; Ba3Nb0.5Ga2.5Si3O14; Ba3Nb2Ga4O14; Ba3NbGa3Si2O14; Ca3NbGa3Si2O14; Ca3NbGa3Si2O14 single crystals; Czochralski method; dielectric properties; elastic properties; melting point; melting temperature; piezoelectric properties; Composite materials; Crystalline materials; Crystals; Dielectrics; Impedance; Multiaccess communication; Organic materials; Surface acoustic waves; Temperature; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195955
