DocumentCode
3413535
Title
A nonvolatile programmable solid electrolyte nanometer switch
Author
Sakamoto, Takanori ; Kaeriyama, Shunichi ; Sunamura, H. ; Mizuno, M. ; Kawaura, H. ; Hasegawa, T. ; Terabe, K. ; Nakayama, Taiki ; Aono, Masaki
Author_Institution
NEC, Tsukuba, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
290
Abstract
This paper presents a nanometer-scale nonvolatile switch composed of a solid electrolyte which is <30 nm and has an on-resistance <100 Ω. A field programmable logic device and 1 kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8 V 0.18 μm CMOS process.
Keywords
CMOS integrated circuits; nanoelectronics; programmable logic devices; random-access storage; semiconductor switches; solid electrolytes; 0.18 micron; 1 kbit; 1.8 V; 100 ohm; 30 nm; CMOS process; Cu2S; FPD; crossbar switch; field programmable logic devices; nanometer-scale switch; nonvolatile memory; nonvolatile programmable switch; solid electrolyte switch; switch on-resistance; Application specific integrated circuits; Bridge circuits; Copper; Electrodes; Logic; National electric code; Solids; Switches; Switching circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332708
Filename
1332708
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