Title :
A nonvolatile programmable solid electrolyte nanometer switch
Author :
Sakamoto, Takanori ; Kaeriyama, Shunichi ; Sunamura, H. ; Mizuno, M. ; Kawaura, H. ; Hasegawa, T. ; Terabe, K. ; Nakayama, Taiki ; Aono, Masaki
Author_Institution :
NEC, Tsukuba, Japan
Abstract :
This paper presents a nanometer-scale nonvolatile switch composed of a solid electrolyte which is <30 nm and has an on-resistance <100 Ω. A field programmable logic device and 1 kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8 V 0.18 μm CMOS process.
Keywords :
CMOS integrated circuits; nanoelectronics; programmable logic devices; random-access storage; semiconductor switches; solid electrolytes; 0.18 micron; 1 kbit; 1.8 V; 100 ohm; 30 nm; CMOS process; Cu2S; FPD; crossbar switch; field programmable logic devices; nanometer-scale switch; nonvolatile memory; nonvolatile programmable switch; solid electrolyte switch; switch on-resistance; Application specific integrated circuits; Bridge circuits; Copper; Electrodes; Logic; National electric code; Solids; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332708
