• DocumentCode
    341362
  • Title

    Correlation learning rule in floating-gate pFET synapses

  • Author

    Hasler, Paul ; Dugger, Jeff

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    5
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    387
  • Abstract
    We study the weight dynamics of the floating-gate pFET synapse and the effects of the pFET´s gate and drain voltages on these dynamics. We show that we can derive a weight update rule such that the equilibrium weight value is proportional to the correlation between the gate and drain voltages. In particular, we want a rule of the form τ´Δw˙=-Δw+ηE[xy], where x is the signal on the gate terminal and y is the signal on the drain terminal. We obtain this rule by making a linear approximation to the weight dynamics around a given equilibrium point. We develop this approximation by considering the basic functional form of the system dynamics and then examining the effects of the gate and drain voltages on the specifics of this form
  • Keywords
    MOS analogue integrated circuits; analogue processing circuits; hot carriers; insulated gate field effect transistors; learning (artificial intelligence); neural chips; tunnelling; correlation learning rule; drain voltage; electron tunnelling; equilibrium weight value; floating-gate pFET synapses; gate voltage; hot electron injection currents; linear approximation; weight dynamics; weight update rule; Analog computers; Circuits; Computer networks; Feedback; Linear approximation; Neural networks; Nonvolatile memory; Secondary generated hot electron injection; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.777590
  • Filename
    777590