Title :
Reconfigurable RF circuits based on integrated MEMS switches
Author :
DeNatale, Jeffrey
Author_Institution :
Rockwell Sci. Center, USA
Abstract :
MEMS phase shifters, based on switchable passive components, are used to achieve a variety of circuits with low insertion loss, wide bandwidth and compact die size. Integration of MEMS switches with active GaAs pHEMT MMICs achieves reconfigurable LNA and PA devices. A 4 b true time-delay phase-shifter achieves ≤1.2 dB insertion loss on a 7 mm2 die.
Keywords :
HEMT integrated circuits; MMIC; delay circuits; microswitches; phase shifters; power amplifiers; reconfigurable architectures; 1 to 39 GHz; 1.2 dB; 4 bit; GaAs; MEMS RF switches; MEMS phase shifters; integrated MEMS switches; low insertion loss circuits; pHEMT MMIC; reconfigurable LNA; reconfigurable RF circuits; reconfigurable power amplifiers; switchable passive components; true time-delay phase-shifter; wide bandwidth circuits; Bandwidth; Gallium arsenide; Insertion loss; MMICs; Micromechanical devices; Microswitches; PHEMTs; Phase shifters; Radio frequency; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332718
