DocumentCode
3413712
Title
Reconfigurable RF circuits based on integrated MEMS switches
Author
DeNatale, Jeffrey
Author_Institution
Rockwell Sci. Center, USA
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
310
Abstract
MEMS phase shifters, based on switchable passive components, are used to achieve a variety of circuits with low insertion loss, wide bandwidth and compact die size. Integration of MEMS switches with active GaAs pHEMT MMICs achieves reconfigurable LNA and PA devices. A 4 b true time-delay phase-shifter achieves ≤1.2 dB insertion loss on a 7 mm2 die.
Keywords
HEMT integrated circuits; MMIC; delay circuits; microswitches; phase shifters; power amplifiers; reconfigurable architectures; 1 to 39 GHz; 1.2 dB; 4 bit; GaAs; MEMS RF switches; MEMS phase shifters; integrated MEMS switches; low insertion loss circuits; pHEMT MMIC; reconfigurable LNA; reconfigurable RF circuits; reconfigurable power amplifiers; switchable passive components; true time-delay phase-shifter; wide bandwidth circuits; Bandwidth; Gallium arsenide; Insertion loss; MMICs; Micromechanical devices; Microswitches; PHEMTs; Phase shifters; Radio frequency; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332718
Filename
1332718
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