DocumentCode :
3413738
Title :
Preliminary temperature accelerated life test (ALT) on III-V commercial concentrator triple-junction solar cells
Author :
Espinet-Gonzalez, Pilar ; Algora, Carlos ; Orlando, V. ; Nunez, N. ; Vazquez, Manuel ; Bautista, J. ; Xiugang, H. ; Barrutia, Laura ; Rey-Stolle, Ignacio ; Araki, Kotaro
Author_Institution :
Inst. de Energia Solar, Univ. Politec. de Madrid, Madrid, Spain
fYear :
2012
fDate :
3-8 June 2012
Firstpage :
1
Lastpage :
6
Abstract :
A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator, while the photo-current nominal conditions are emulated by injecting current in darkness. Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorated.
Keywords :
III-V semiconductors; busbars; elemental semiconductors; failure analysis; gallium arsenide; germanium compounds; indium compounds; life testing; phosphorus compounds; solar cells; solar energy concentrators; wear; ALT; III-V commercial concentrator triple-junction solar cells; acceleration factor; busbar deterioration; climatic chamber; failure distribution; failure mechanism evaluation; failure mode analysis; germanium triple-junction commercial concentrator solar cell; indium gallium arsenide triple-junction commercial concentrator solar cell; indium gallium phosphide triple-junction commercial concentrator solar cell; life data analysis; nominal working conditions; parameter Weibull function; photocurrent nominal conditions; preliminary temperature accelerated life test; reliability evaluation; short circuits; surrounding finger deterioration; warranty period evaluation; wear-out type; Acceleration; Current density; Life estimation; Photovoltaic cells; Reliability; Stress; Temperature; ALT; Accelerated life test; CPV; III-V; Photovoltaics; concentrator; reliability; solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
Conference_Location :
Austin, TX
Type :
conf
DOI :
10.1109/PVSC-Vol2.2012.6750496
Filename :
6750496
Link To Document :
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