• DocumentCode
    3413808
  • Title

    The electronic behaviour of Si3N4-GaAs interfaces

  • Author

    Swanson, J.G. ; Wang, Q.H. ; Bowser, M.I.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
  • fYear
    1995
  • fDate
    35004
  • Firstpage
    8
  • Lastpage
    13
  • Abstract
    The static and dynamic behaviours of Si3N4-GaAs interfaces are described. The possible effects of the passivated surface on device behaviour are considered with relation to devices of current interest
  • Keywords
    III-V semiconductors; gallium arsenide; interface states; passivation; semiconductor-insulator boundaries; silicon compounds; Si3N4-GaAs; Si3N4-GaAs interfaces; devices; dynamic behaviour; electronic behaviour; passivated surfaces; static behaviour; Current density; Electron emission; Filling; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Interface states; Semiconductor device doping; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-2537-0
  • Type

    conf

  • DOI
    10.1109/EDMO.1995.493685
  • Filename
    493685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3413808