DocumentCode
3413921
Title
General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance
Author
Lukyanchikova
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear
1995
fDate
35004
Firstpage
32
Lastpage
37
Abstract
The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed
Keywords
II-VI semiconductors; III-V semiconductors; optical noise; optoelectronic devices; semiconductor device models; semiconductor device noise; II-VI compounds; III-V compounds; excess noise; heterojunctions; homojunctions; model; optoelectronic devices; Acoustical engineering; Heterojunctions; Light emitting diodes; Mechanical factors; Noise generators; Noise measurement; Optoelectronic devices; P-n junctions; Semiconductor device noise; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location
London
Print_ISBN
0-7803-2537-0
Type
conf
DOI
10.1109/EDMO.1995.493690
Filename
493690
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