Title :
Monte Carlo simulations of carrier transport in high speed quantum well lasers
Author_Institution :
Dept. of Phys., Durham Univ., UK
Abstract :
A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 μm. The device consists of three unstrained 80 Å InGaAs wells bounded by 700 Å wide ungraded InGaAsP (1.25 μm) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation
Keywords :
III-V semiconductors; Monte Carlo methods; carrier density; frequency response; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; quantum well lasers; semiconductor device models; 1.55 mum; 700 angstrom; 80 angstrom; InGaAs-InGaAsP-InP; InP; InP based system; carrier transport; fixed bias simulations; frequency response; high speed quantum well lasers; laser model; modulated bias simulation; modulation bandwidth; multiple quantum well laser; picosecond carrier dynamics; self-consistent ensemble Monte Carlo calculation; ungraded InGaAsP confinement barriers; unstrained InGaAs wells; Acoustic scattering; Carrier confinement; Electron optics; Laser modes; Laser theory; Light scattering; Monte Carlo methods; Optical scattering; Particle scattering; Quantum well lasers;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493693
