Title :
Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
InGaAs/InP heterojunction phototransistors are described which have a dc gain of several thousand and a frequency response that shows higher output power than optimised photodiodes at 40 GHz. This is accomplished as a result of the two-terminal, edge-coupled design approach, which allows small area devices to be fabricated with low parasitics and efficient optical access
Keywords :
III-V semiconductors; frequency response; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; phototransistors; 40 GHz; InGaAs-InP; InGaAs/InP heterojunction phototransistors; dc gain; efficient optical access; frequency response; low parasitics; millimetre-wave phototransistors; output power; small area devices; two-terminal edge-coupled design; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical attenuators; Optical devices; Optical receivers; Optical sensors; Phototransistors; Stimulated emission;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493695
