A large signal model for a GaInP/GaAs HBT

Author

Kelly, M.J. ; Stewart, J.A.C. ; Patterson, A.D.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

fYear

1995

fDate

35004

Firstpage

70

Lastpage

75

Abstract

A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V_ce dependent function where the constants of the equation are made to vary with base current I_b. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices

Keywords

III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; CAD packages; GaInP-GaAs; GaInP/GaAs HBT; base current; dc characteristics; dc transfer characteristics; direct extraction techniques; equivalent circuit; extrinsic elements; intrinsic elements; large signal model; lumped element hybrid-pi topology; microwave transistor; nonuniform gain; optimisation; power transfer characteristics; s-parameters; small signal extraction; Capacitance measurement; Current measurement; Equations; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Packaging; Scattering parameters; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493697

Filename

493697