Title :
A large signal model for a GaInP/GaAs HBT
Author :
Kelly, M.J. ; Stewart, J.A.C. ; Patterson, A.D.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
Abstract :
A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a Vce dependent function where the constants of the equation are made to vary with base current Ib. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; CAD packages; GaInP-GaAs; GaInP/GaAs HBT; base current; dc characteristics; dc transfer characteristics; direct extraction techniques; equivalent circuit; extrinsic elements; intrinsic elements; large signal model; lumped element hybrid-pi topology; microwave transistor; nonuniform gain; optimisation; power transfer characteristics; s-parameters; small signal extraction; Capacitance measurement; Current measurement; Equations; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Packaging; Scattering parameters; Topology;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493697
