Title :
Characterisation of transparent ITO emitter contact InP/InGaAs heterojunction phototransistors
Author :
Bashar, S.A. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
Abstract :
The electrical, optical and spectral responses of optically transparent emitter InP/InGaAs heterojunction phototransistors (HPTs) fabricated using Indium Tin Oxide (ITO) are presented. These HPTs showed significantly increased optical responsivities while: the electrical characteristics were similar to their respective opaque counterparts. Responsivities of 28 A/W at 1310 nm for the InP/InGaAs HPTs were obtained. The spectral responses of these phototransistors were simulated and compared with the measured results and good correlation between the experiments and the theoretical models were obtained
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared spectra; phototransistors; semiconductor device models; 1310 nm; HPT; ITO; InP-InGaAs; InP/InGaAs heterojunction phototransistors; InSnO; electrical characteristics; optical gain; optical responsivities; simulation; spectral response; theoretical models; transparent ITO emitter contact; Absorption; Heterojunctions; Indium gallium arsenide; Indium phosphide; Indium tin oxide; Optical devices; Optical refraction; Optical variables control; Phototransistors; Stimulated emission;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493698
