DocumentCode :
3414219
Title :
Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set
Author :
Di Paola, A. ; Sannino, Mario
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
fYear :
1995
fDate :
35004
Firstpage :
104
Lastpage :
108
Abstract :
Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper
Keywords :
automatic test equipment; electric noise measurement; gain measurement; high electron mobility transistors; semiconductor device noise; semiconductor device testing; ATE; HEMT; bias conditions; gain measurements; low noise transistors; noise figure measurements; test-setup; Acoustic reflection; Gain measurement; HEMTs; Impedance matching; MODFETs; Noise figure; Noise measurement; Power measurement; Testing; Tuners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
Type :
conf
DOI :
10.1109/EDMO.1995.493703
Filename :
493703
Link To Document :
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