• DocumentCode
    3414219
  • Title

    Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set

  • Author

    Di Paola, A. ; Sannino, Mario

  • Author_Institution
    Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
  • fYear
    1995
  • fDate
    35004
  • Firstpage
    104
  • Lastpage
    108
  • Abstract
    Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper
  • Keywords
    automatic test equipment; electric noise measurement; gain measurement; high electron mobility transistors; semiconductor device noise; semiconductor device testing; ATE; HEMT; bias conditions; gain measurements; low noise transistors; noise figure measurements; test-setup; Acoustic reflection; Gain measurement; HEMTs; Impedance matching; MODFETs; Noise figure; Noise measurement; Power measurement; Testing; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-2537-0
  • Type

    conf

  • DOI
    10.1109/EDMO.1995.493703
  • Filename
    493703