DocumentCode
3414219
Title
Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set
Author
Di Paola, A. ; Sannino, Mario
Author_Institution
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
fYear
1995
fDate
35004
Firstpage
104
Lastpage
108
Abstract
Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper
Keywords
automatic test equipment; electric noise measurement; gain measurement; high electron mobility transistors; semiconductor device noise; semiconductor device testing; ATE; HEMT; bias conditions; gain measurements; low noise transistors; noise figure measurements; test-setup; Acoustic reflection; Gain measurement; HEMTs; Impedance matching; MODFETs; Noise figure; Noise measurement; Power measurement; Testing; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location
London
Print_ISBN
0-7803-2537-0
Type
conf
DOI
10.1109/EDMO.1995.493703
Filename
493703
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