Title :
Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications
Author :
Livreri ; Sannino
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature
Keywords :
S-parameters; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; SHF; gain performance; high-electron mobility transistors; microwave low-noise applications; noise performance; pHEMT; pseudomorphic HEMT; temperature; Gain measurement; HEMTs; MODFETs; Microwave transistors; Noise figure; Noise measurement; PHEMTs; Performance gain; Scattering parameters; Temperature distribution;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493704
