Title :
Transient electro-thermal modelling of AlGas/GaAs HBTs
Author :
Russell, I.A.D. ; Webb, P.W. ; Davis, R.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Birmingham Univ., UK
Abstract :
This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT
Keywords :
III-V semiconductors; SPICE; aluminium compounds; current distribution; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; simulation; temperature distribution; thermal analysis; thermal diffusion; transient analysis; transmission line matrix methods; AlGaAs-GaAs; HBT model; SPICE; TLM thermal diffusion simulator; circuit simulator; current distribution; discretised equivalent circuit model; heterojunction bipolar transistors; power transients; temperature distribution; transient electro-thermal modelling; transmission line matrix; Circuit simulation; Distributed parameter circuits; Gallium arsenide; Heterojunction bipolar transistors; Power system modeling; Power system transients; Power transmission lines; SPICE; Temperature distribution; Transmission line matrix methods;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493705
