Title :
A statistical critical dimension control at CMOS cell level
Author :
Misaka, A. ; Goda, A. ; Matsuoka, K. ; Umimoto, H. ; Odanaka, S.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
This paper reports a new statistical methodology for controlling the spreads of the CD (critical dimension) distribution in the lithography process. Response surface functions (RSF) for the CD in line and arbitrary gap patterns are introduced. The method allows sensitivity analysis of whole gate patterns at CMOS cell level.
Keywords :
CMOS integrated circuits; lithography; semiconductor process modelling; CMOS cell; lithography; response surface function; statistical critical dimension control; CMOS integrated circuits; Circuit simulation; Fabrication; Lithography; Marine vehicles; Pattern analysis; Polynomials; Response surface methodology; Semiconductor device modeling; Statistical analysis;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554062
