Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials

Author

Arita, Koji ; Shimada, Yasuhiro ; Uemoto, Yasuhiro ; Hayashi, Shinichiro ; Azuma, Masamichi ; Judai, Y. ; Sumi, Takuya ; Fujii, Eiji ; Otsuki, Tatsuo ; McMillan, Larry D. ; De Araujo, C.A.P.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

13

Abstract

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as “Y-1”) is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour

Keywords

bismuth compounds; ferroelectric materials; ferroelectric storage; random-access storage; strontium compounds; FeRAM; SrBi₂(NbTa)₂O₉; Y-1 capacitors; data transfer rate; fatigue-free behaviour; ferroelectric materials; ferroelectric nonvolatile memory technology; operating voltages; Bismuth; Capacitors; Ferroelectric films; Ferroelectric materials; Laboratories; Nonvolatile memory; Polarization; Random access memory; Semiconductor devices; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602702

Filename

602702