Monolithic V-band high power and varactor tunable HEMT oscillators

Author

Schefer, M. ; Lott, U. ; Klepser, B. ; Meier, H. ; Patrick, W. ; Bachtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1995

fDate

35004

Firstpage

155

Lastpage

160

Abstract

The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 μm InP based HEMT with f_max=200 GHz and f_t=100 GHz. A basic V-band oscillator, a high power and a varactor tuned oscillator are compared. The resonance frequency of the basic oscillator is 54.333 GHz and the phase noise -70 dBc/Hz @ 1 MHz offset. The high power oscillator shows 83 dBm output power at 48 GHz For the varactor tunable oscillator an output power of 0 dBm at 63 GHz and a tuning range of 100 MHz are measured. The circuits were fabricated in coplanar technology

Keywords

HEMT integrated circuits; III-V semiconductors; coplanar waveguides; field effect MIMIC; indium compounds; millimetre wave oscillators; phase noise; varactors; variable-frequency oscillators; 0.2 micron; 54.333 GHz; InP; MIMIC oscillators; V-band; active device; coplanar technology; high power oscillator; output power; phase noise; resonance frequency; tuning range; varactor tunable HEMT oscillators; Fabrication; HEMTs; Indium phosphide; Oscillators; Phase noise; Power generation; Resonance; Resonant frequency; Tunable circuits and devices; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493712

Filename

493712