DocumentCode
3414456
Title
Influences of the refractive index of defect layer on far-infrared spectral characteristics of 1-D doped photonic crystal
Author
Zhao, Xuanke ; Zhao, Jiangang ; Wang, Lianfen
Author_Institution
Dept. of Phys., Xi´´an Res. Inst. of Hi-Tech, Xi´´an, China
fYear
2012
fDate
24-26 Aug. 2012
Firstpage
252
Lastpage
256
Abstract
This Photonic crystal can realize thermal infrared stealth based on photonic band gaps in the far infrared wavelengths, and doped photonic crystal can realize “hole-digging” spectrum in military laser wavelength of 10.6μm, so as to realize the compatible laser and infrared stealth. In this paper, we selected the far infrared-transparent materials, PbTe and ZnSe as high refractive index and low refractive index material respectively, and designed two different 1-D doped photonic crystals to achieve compatible stealth of laser(λ=10.6μm) and far-infrared of 8~14μm. The spectral characteristics and influences of the refractive index of doped layer on far-infrared spectral of two doped photonic crystals were calculated by Transfer matrix method, and the optimal values of the refractive index of doped layer were obtained too. This point out the direction for preparation of 1-D doped photonic crystals to achieve compatible stealth of laser and infrared by “hole-digging spectral”.
Keywords
II-VI semiconductors; infrared spectra; lead compounds; photonic band gap; photonic crystals; refractive index; transfer function matrices; zinc compounds; 1-D doped photonic crystal; PbTe; ZnSe; compatible stealth; defect layer; far infrared-transparent materials; far-infrared spectra; photonic band gaps; refractive index; thermal infrared stealth; transfer matrix method; wavelength 10.6 mum; Crystals; Glass; Indexes; Laser theory; Photonic crystals; Laser stealth; compatible stealth; doped photonic crystals; infrared stealth;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Science and Information Processing (CSIP), 2012 International Conference on
Conference_Location
Xi´an, Shaanxi
Print_ISBN
978-1-4673-1410-7
Type
conf
DOI
10.1109/CSIP.2012.6308842
Filename
6308842
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